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Diamond film growth from fullerene precursors

United States Patent

*** EXPIRED ***
April 15, 1997
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.
Gruen; Dieter M. (Downers Grove, IL), Liu; Shengzhong (Woodridge, IL), Krauss; Alan R. (Naperville, IL), Pan; Xianzheng (Woodridge, IL)
University of Chicago (Chicago, IL)
08/ 143,866
October 27, 1993
The United States Government has rights in this invention pursuant to Contract W-31-109-ENG-38 between the U.S. Department of Energy and the University of Chicago.