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Optically switched graphene/4H-SiC junction bipolar transistor

United States Patent

May 8, 2018
View the Complete Patent at the US Patent & Trademark Office
A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.
Chandrashekhar; MVS (Columbia, SC), Sudarshan; Tangali S. (Columbia, SC), Omar; Sabih U. (West Columbia, SC), Brown; Gabriel (Lexington, SC), Shetu; Shamaita S. (West Columbia, SC)
University of South Carolina (Columbia, SC)
15/ 049,743
February 22, 2016
GOVERNMENT SUPPORT CLAUSE This invention was made with government support under ECCS-EPMD Award No. 1309466 awarded by the National Science Foundation, under 12-3834 awarded by the Nuclear Energy University Program, Department of Energy, and under N000141010530 awarded by the Office of Naval Research. The government has certain rights in the invention.