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Methods and apparatuses for detection of radiation with semiconductor image sensors

United States Patent

April 10, 2018
View the Complete Patent at the US Patent & Trademark Office
Idaho National Laboratory - Visit the Technology Transfer and Commercialization Office Website
A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.
Cogliati; Joshua Joseph (Idaho Falls, ID)
Battelle Energy Alliance, LLC (Idaho Falls, ID)
14/ 080,542
November 14, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Contract Number DE-AC07-05ID14517 awarded by the United States Department of Energy. The government has certain rights in the invention.