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Near-infrared light emitting device using semiconductor nanocrystals

United States Patent

April 3, 2018
View the Complete Patent at the US Patent & Trademark Office
A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.
Supran; Geoffrey J. S. (Cambridge, MA), Song; Katherine W. (Cambridge, MA), Hwang; Gyuweon (Cambridge, MA), Correa; Raoul Emile (West Hartford, CT), Shirasaki; Yasuhiro (Tachikawa, JP), Bawendi; Moungi G. (Cambridge, MA), Bulovic; Vladimir (Lexington, MA), Scherer; Jennifer (Cambridge, MA)
Massachusetts Institute of Technology (Cambridge, MA)
14/ 101,867
December 10, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Contract No. W911NF-07-D-0004 awarded by the Army Research Office and under Grant No. DE-SC0001088 awarded by the Department of Energy. The government has certain rights in the invention.