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Atomic layer chemical patterns for block copolymer assembly

United States Patent

9,927,706
March 27, 2018
View the Complete Patent at the US Patent & Trademark Office
Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
Nealey; Paul Franklin (Chicago, IL), Chang; Tzu-Hsuan (Madison, WI), Xiong; Shisheng (Darien, IL), Ma; Zhenqiang (Middleton, WI), Arnold; Michael Scott (Middleton, WI), Jacobberger; Robert (Madison, WI)
The University of Chicago (Chicago, IL), Wisconsin Alumni Research Foundation (Madison, WI)
15/ 215,016
20170062229
July 20, 2016
STATEMENT OF GOVERNMENTAL SUPPORT This invention was made with government support under N00014-09-1-0803 awarded by the US Navy/ONR, 0832760 awarded by the National Science Foundation, and DE-SC0006414 awarded by the US Department of Energy. The government has certain rights in the invention.