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Selective, electrochemical etching of a semiconductor

United States Patent

March 20, 2018
View the Complete Patent at the US Patent & Trademark Office
Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.
Dahal; Rajendra P. (Troy, NY), Bhat; Ishwara B. (Clifton Park, NY), Chow; Tat-Sing (Niskayuna, NY)
15/ 116,041
February 10, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with United States Government support under Contract Number DE-AR0000304, awarded by the Advanced Research Projects Agency--Energy (ARPA-E) of the United States Government. The United States Government has certain rights in the invention.