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High voltage semiconductor devices and methods of making the devices

United States Patent

January 23, 2018
View the Complete Patent at the US Patent & Trademark Office
A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.
Matocha; Kevin (Round Rock, TX), Chatty; Kiran (Round Rock, TX), Banerjee; Sujit (Round Rock, TX)
Monolith Semiconductor Inc. (Round Rock, TX)
15/ 412,462
January 23, 2017
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was made with government support under Grant No. DE-AR0000442 awarded by the Department of Energy. The government has certain rights in the invention.