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Method for forming silver-copper mixed kesterite semiconductor film

United States Patent

January 23, 2018
View the Complete Patent at the US Patent & Trademark Office
After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<x<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<x<2, and 0.ltoreq.y.ltoreq.1.
Gershon; Talia S. (White Plains, NY), Gunawan; Oki (Westwood, NJ), Lee; Yun S. (White Plains, NY), Mankad; Ravin (Yonkers, NY)
International Business Machines Corporation (Armonk, NY)
15/ 336,427
October 27, 2016
STATEMENT OF GOVERNMENT RIGHTS This invention was made with Government support under Contract No.: DE-EE-0006334 awarded by Department of Energy. The Government has certain rights in this invention.