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Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

United States Patent

9,852,891
December 26, 2017
View the Complete Patent at the US Patent & Trademark Office
A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.
Popovic; Svetozar (Norfolk, VA), Upadhyay; Janardan (Norfolk, VA), Vuskovic; Leposava (Norfolk, VA), Phillips; H. Lawrence (Hayes, VA), Valente-Feliciano; Anne-Marie (Newport News, VA)
Old Dominion University Research Foundation (Norfolk, VA)
14/ 688,363
20170040144
April 16, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The present invention was made in the course of federally sponsored research or development pursuant to U.S. Department of Energy Project RF #325111. The United States Government may have certain Walk-In-Rights in the invention.