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Method of making thermally-isolated silicon-based integrated circuits

United States Patent

9,824,932
November 21, 2017
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
Wojciechowski; Kenneth (Albuquerque, NM), Olsson; Roy (Albuquerque, NM), Clews; Peggy J. (Tijeras, NM), Bauer; Todd (Albuquerque, NM)
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
15/ 234,932
August 11, 2016
GOVERNMENT LICENSE RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.