Skip to Content
Find More Like This
Return to Search

Electroless atomic layer deposition

United States Patent

9,803,285
October 31, 2017
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.
Robinson; David Bruce (Hayward, CA), Cappillino; Patrick J. (Fremont, CA), Sheridan; Leah B. (Knoxville, TN), Stickney; John L. (Athens, GA), Benson; David M. (Athens, GA)
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
14/ 189,866
February 25, 2014
STATEMENT OF GOVERNMENT RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.