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High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors

United States Patent

9,793,336
October 17, 2017
View the Complete Patent at the US Patent & Trademark Office
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
Deligianni; Hariklia (Alpine, NJ), Gallagher; William J. (Ardsley, NY), Mason; Maurice (Danbury, CT), O'Sullivan; Eugene J. (Nyack, NY), Romankiw; Lubomyr T. (Briancliff Manor, NY), Wang; Naigang (Yorktown Heights, NY)
INTERNATIONAL BUSIENSS MACHINES CORPORATION (Armonk, NY)
15/ 410,987
20170229533
January 20, 2017
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No.: University of California Subcontract No. B601996, awarded by Department of Energy. The Government has certain rights in this invention.