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Skyrmion based universal memory operated by electric current

United States Patent

9,773,540
September 26, 2017
View the Complete Patent at the US Patent & Trademark Office
A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.
Zang; Jiadong (New Market, NH), Chien; Chia-Ling (Cockeysville, MD), Li; Yufan (Baltimore, MD), Lake; Roger K. (Riverside, CA), Yin; Gen (Riverside, CA)
THE JOHNS HOPKINS UNIVERSITY (Baltimore, MD)
15/ 213,019
20170018297
July 18, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was made with government support under Grant Nos. 1128304 awarded by the National Science Foundation, and DEFG02-08ER46544 awarded by the Department of Energy. The government has certain rights in the invention.