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Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

United States Patent

9,755,023
September 5, 2017
View the Complete Patent at the US Patent & Trademark Office
The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
Menon; Madhu (Lexington, KY), Sheetz; Michael (Lexington, KY), Sunkara; Mahendra Kumar (Louisville, KY), Pendyala; Chandrashekhar (Chandler, AZ), Sunkara; Swathi (Louisville, KY), Jasinski; Jacek B. (Louisville, KY)
The University of Kentucky Research Foundation (Lexington, KY), The University of Louisville Research Foundation, Inc. (Louisville, KY)
13/ 630,875
20130081940
September 28, 2012
This invention was made with government support under contract no. DE-FG02-07ER46375 awarded by U.S. Department of Energy. The government has certain rights in the invention.