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Avalanche diode having reduced dark current and method for its manufacture

United States Patent

9,748,429
August 29, 2017
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.
Davids; Paul (Albuquerque, NM), Starbuck; Andrew Lee (Albuquerque, NM), Pomerene; Andrew T. S. (Albuquerque, NM)
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
14/ 870,195
September 30, 2015
GOVERNMENT LICENSE RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.