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Use of surfactants to control island size and density

United States Patent

9,735,008
August 15, 2017
View the Complete Patent at the US Patent & Trademark Office
Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.
Merrell; Jason (Draper, UT), Liu; Feng (Salt Lake City, UT), Stringfellow; Gerald B. (Salt Lake City, UT)
University of Utah Research Foundation (Salt Lake City, UT)
14/ 063,143
20140130731
October 25, 2013
REFERENCE TO GOVERNMENT RIGHTS This invention was made with government support under DE-FG02-04ER46148 awarded by the Department of Energy. The government has certain rights in the invention.