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Fast method for reactor and feature scale coupling in ALD and CVD

United States Patent

August 8, 2017
View the Complete Patent at the US Patent & Trademark Office
Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.
Yanguas-Gil; Angel (Northbrook, IL), Elam; Jeffrey W. (Elmhurst, IL)
14/ 633,025
February 26, 2015
STATEMENT OF GOVERNMENT INTEREST The United States Government has rights in the invention described herein pursuant to Contract No. DE-AC02-06CH11357 between the United States Department of Energy and UChicago Argonne, LLC, as operator of Argonne National Laboratory.