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Dry etch method for texturing silicon and device

United States Patent

9,716,195
July 25, 2017
View the Complete Patent at the US Patent & Trademark Office
A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.
Gershon; Talia S. (White Plains, NY), Haight; Richard A. (Mahopac, NY), Kim; Jeehwan (Los Angeles, CA), Lee; Yun Seog (White Plains, NY)
International Business Machines Corporation (Armonk, NY)
14/ 747,954
20160351734
June 23, 2015
GOVERNMENT RIGHTS This invention was made with Government support under CONTRACT NUMBER: DE-EE0006334 awarded by Department of Energy. The Government has certain rights in this invention.