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Large-area, laterally-grown epitaxial semiconductor layers

United States Patent

9,711,352
July 18, 2017
View the Complete Patent at the US Patent & Trademark Office
Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.
Han; Jung (Woodbridge, CT), Song; Jie (New Haven, CT), Chen; Danti (New Haven, CT)
Yale University (New Haven, CT)
14/ 776,634
20160027636
March 14, 2014
GOVERNMENT FUNDING This invention was made with government support under Grant No. DE-SC0001134 awarded by the Department of Energy. The government has certain rights in the invention.