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Wafer scale oblique angle plasma etching

United States Patent

9,659,797
May 23, 2017
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.
Burckel; David Bruce (Albuquerque, NM), Jarecki, Jr.; Robert L. (Albuquerque, NM), Finnegan; Patrick Sean (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 489,362
September 17, 2014
STATEMENT OF GOVERNMENT INTEREST This invention was developed under contract DE-AC04-94AL85000 between Sandia Corporation and the U. S. Department of Energy. The U.S. Government has certain rights in this invention.