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Method of making a silicon nanowire device

United States Patent

May 23, 2017
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation. The method, in examples, includes thinning the nanowire through iterative oxidation and etching of the oxidized portion.
Okandan; Murat (Edgewood, NM), Draper; Bruce L. (Albuquerque, NM), Resnick; Paul J. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
15/ 354,196
November 17, 2016
NOTICE OF GOVERNMENT RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.