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Visible light laser voltage probing on thinned substrates

United States Patent

9,599,667
March 21, 2017
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.
Beutler; Joshua (Albuquerque, NM), Clement; John Joseph (Albuquerque, NM), Miller; Mary A. (Albuquerque, NM), Stevens; Jeffrey (Albuquerque, NM), Cole, Jr.; Edward I. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 836,713
August 26, 2015
STATEMENT OF GOVERNMENTAL INTEREST This invention was developed under contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.