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Vertical III-nitride thin-film power diode

United States Patent

9,595,616
March 14, 2017
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
Wierer, Jr.; Jonathan (Coopersburg, PA), Fischer; Arthur J. (Sandia Park, NM), Allerman; Andrew A. (Tijeras, NM)
Sandia Corporation (Albuquerque, NM)
14/ 957,012
December 2, 2015
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U. S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.