Skip to Content
Find More Like This
Return to Search

High voltage semiconductor devices and methods of making the devices

United States Patent

9,583,482
February 28, 2017
View the Complete Patent at the US Patent & Trademark Office
A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.
Matocha; Kevin (Round Rock, TX), Chatty; Kiran (Round Rock, TX), Banerjee; Sujit (Round Rock, TX)
MONOLITH SEMICONDUCTOR INC. (Round Rock, TX)
14/ 619,742
20160233210
February 11, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was made with government support under Grant No. DE-AR0000442 awarded by the Department of Energy. The government has certain rights in the invention.