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Lateral electrochemical etching of III-nitride materials for microfabrication

United States Patent

9,583,353
February 28, 2017
View the Complete Patent at the US Patent & Trademark Office
Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.
Han; Jung (Woodbridge, CT)
Yale University (New Haven, CT)
13/ 923,248
June 20, 2013
FEDERALLY SPONSORED RESEARCH This invention was made with government support under DE-FG-2-07ER46387 awarded by the U.S. Department of Energy. The government has certain rights in the invention.