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Semiconductor structure and recess formation etch technique

United States Patent

February 14, 2017
View the Complete Patent at the US Patent & Trademark Office
A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.
Lu; Bin (Boston, MA), Sun; Min (Cambridge, MA), Palacios; Tomas Apostol (Belmont, MA)
Massachusetts Institute of Technology (Cambridge, MA)
14/ 442,546
November 15, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with Government support under Grant No. DE-AR0000123 awarded by the Department of Energy and under Grant No. N00014-12-1-0959 awarded the Office of Naval Research. The Government has certain rights in the invention.