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Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance

United States Patent

9,530,908
December 27, 2016
View the Complete Patent at the US Patent & Trademark Office
A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.
Chang; Liang-Yi (White Plains, NY), Gershon; Talia S. (White Plains, NY), Haight; Richard A. (Mahopac, NY), Lee; Yun Seog (White Plains, NY)
International Business Machines Corporation (Armonk, NY)
14/ 540,986
20160141434
November 13, 2014
STATEMENT OF GOVERNMENT RIGHTS This invention was made with Government support under Contract number DE-EE-0006334 awarded by Department of Energy. The Government has certain rights in this invention.