Skip to Content
Find More Like This
Return to Search

Three dimensional strained semiconductors

United States Patent

9,490,318
November 8, 2016
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.
Voss; Lars (Livermore, CA), Conway; Adam (Livermore, CA), Nikolic; Rebecca J. (Oakland, CA), Leao; Cedric Rocha (Oakland, CA), Shao; Qinghui (Fremont, CA)
Lawrence Livermore National Security, LLC (Livermore, CA)
13/ 912,885
20130334541
June 7, 2013
The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.