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Strain tunable light emitting diodes with germanium P-I-N heterojunctions

United States Patent

9,472,535
October 18, 2016
View the Complete Patent at the US Patent & Trademark Office
Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
Lagally; Max G. (Madison, WI), Sanchez Perez; Jose Roberto (Madison, WI)
Wisconsin Alumni Research Foundation (Madison, WI)
14/ 074,955
20150129911
November 8, 2013
REFERENCE TO GOVERNMENT RIGHTS This invention was made with government support under DE-FG02-03ER46028 awarded by the Department of Energy. The government has certain rights in the invention.