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Ultrananocrystalline diamond contacts for electronic devices

United States Patent

9,484,474
November 1, 2016
View the Complete Patent at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.
Sumant; Anirudha V. (Plainfield, IL), Smedley; John (Shirley, NY), Muller; Erik (South Setauket, NY)
UChicago Argonne, LLC (Chicago, IL), Brookhaven Science Associates, LLC (Upton, NY), The Research Foundation for the State University of New York (Albany, NY)
14/ 790,995
July 2, 2015
The United States Government claims certain rights in this invention pursuant to Contract Nos. DE-AC02-98CH10886 and DE-SC0012704 awarded by the U.S. Department of Energy to Brookhaven Science Associates, LLC, Contract No. W-31-109-ENG-38 between the United States Government and the University of Chicago and/or pursuant to DE-AC02-06CH11357 between the United States Government and UChicago Argonne, LLC representing Argonne National Laboratory.