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Virtual substrates for epitaxial growth and methods of making the same

United States Patent

September 27, 2016
View the Complete Patent at the US Patent & Trademark Office
A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
Atwater; Harry A. (South Pasadena, CA), Leite; Marina S. (Pasadena, CA), Warmann; Emily C. (Riverside, CA), Callahan; Dennis M. (Los Angeles, CA)
California Institute of Technology (Pasadena, CA)
12/ 928,762
December 17, 2010
STATEMENT OF FEDERALLY FUNDED RESEARCH The Federal government has certain rights in this invention pursuant to Department of Energy Grant No. DE-FG36-08G018071.