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Local doping of two-dimensional materials

United States Patent

9,449,851
September 20, 2016
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
Wong; Dillon (Alameda, CA), Velasco, Jr.; Jairo (Berkeley, CA), Ju; Long (Berkeley, CA), Kahn; Salman (Tracy, CA), Lee; Juwon (Berkeley, CA), Germany; Chad E. (Richmond, CA), Zettl; Alexander K. (Kensington, CA), Wang; Feng (Fremont, CA), Crommie; Michael F. (Oakland, CA)
The Regents of the University of California (Oakland, CA)
14/ 833,407
20160064249
August 24, 2015
STATEMENT OF GOVERNMENT SUPPORT This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy, under Contract No. NSF-CMMI-1235361 awarded by the National Science Foundation, and under a National Defense Science and Engineering Graduate Fellowship awarded by the U.S. Department of Defense. The government has certain rights in this invention.