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Controlling the stoichiometry and doping of semiconductor materials

United States Patent

August 16, 2016
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
Albin; David (Denver, CO), Burst; James (Lakewood, CO), Metzger; Wyatt (Louisville, CO), Duenow; Joel (Golden, CO), Farrell; Stuart (Wheat Ridge, CO), Colegrove; Eric (Denver, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
14/ 615,068
February 5, 2015
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DEAC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.