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Method for forming monolayer graphene-boron nitride heterostructures

United States Patent

August 9, 2016
View the Complete Patent at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.
Sutter; Peter Werner (Westhampton Beach, NY), Sutter; Eli Anguelova (Westhampton Beach, NY)
Brookhaven Science Associates, LLC (Upton, NY)
14/ 453,314
August 6, 2014
This invention was made with Government support under Contract No. DE-AC02-98CH10886, awarded by the U.S. Department of Energy. The United States government has certain rights in the invention.