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Oxygen-free atomic layer deposition of indium sulfide

United States Patent

July 5, 2016
View the Complete Patent at the US Patent & Trademark Office
A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.
Martinson; Alex B. (Naperville, IL), Hock; Adam S. (Chicago, IL), McCarthy; Robert (Chicago, IL), Weimer; Matthew S. (Chicago, IL)
UChicago Argnonne, LLC (Chicago, IL)
14/ 335,745
July 18, 2014
The United States Government has rights in the invention described herein pursuant to Contract No. DE-AC02-06CH11357 between the United States Department of Energy and UChicago Argonne, LLC, as operator of Argonne National Laboratory.