Skip to Content
Find More Like This
Return to Search

Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

United States Patent

July 5, 2016
View the Complete Patent at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.
Li; Zheng (South Setauket, NY), Chen; Wei (East Setauket, NY)
Brookhaven Science Associates, LLC (Upton, NY)
14/ 352,538
October 24, 2012
STATEMENT OF GOVERNMENT LICENSE RIGHTS The present invention was made with government support under contract number DE-AC02-98CH 10886 awarded by the U.S. Department of Energy. The United States government has certain rights in this invention.