Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.
ACKNOWLEDGMENT OF GOVERNMENT SUPPORT
This invention was made with government support under contract No. DE-EE0005957 awarded by The United States Department of Energy. The government has certain rights in the invention.