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Polarization induced doped transistor

United States Patent

June 7, 2016
View the Complete Patent at the US Patent & Trademark Office
A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.
Xing; Huili (Grace), (Notre Dame, IN), Jena; Debdeep (Notre Dame, IN), Nomoto; Kazuki (Notre Dame, IN), Song; Bo (Notre Dame, IN), Zhu; Mingda (Notre Dame, IN), Hu; Zongyang (Notre Dame, IN)
University of Notre Dame du Lac (Notre Dame, IN)
14/ 470,569
August 27, 2014
GOVERNMENT LICENSE RIGHTS This invention was made with government support under DE-AR0000454 awarded by The U.S. Department of Energy. The government has certain rights in the invention.