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Methods for resistive switching of memristors

United States Patent

May 10, 2016
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).
Mickel; Patrick R. (Albuquerque, NM), James; Conrad D. (Albuquerque, NM), Lohn; Andrew (Santa Monica, CA), Marinella; Matthew (Albuquerque, NM), Hsia; Alexander H. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 612,958
February 3, 2015
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.