Skip to Content
Find More Like This
Return to Search

Methods for resistive switching of memristors

United States Patent

9,336,870
May 10, 2016
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).
Mickel; Patrick R. (Albuquerque, NM), James; Conrad D. (Albuquerque, NM), Lohn; Andrew (Santa Monica, CA), Marinella; Matthew (Albuquerque, NM), Hsia; Alexander H. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 612,958
February 3, 2015
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.