This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.
STATEMENT OF GOVERNMENT SUPPORT
This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy and under Grant No. EEC-0832819 awarded by the U.S. National Science Foundation, and under Contract No. W911NF-11-1-0089 awarded by DOD Advanced Research Projects Agency (DARPA). The government has certain rights in this invention.