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Diode having trenches in a semiconductor region

United States Patent

March 22, 2016
View the Complete Patent at the US Patent & Trademark Office
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.
Palacios; Tomas Apostol (Cambridge, MA), Lu; Bin (Boston, MA), Matioli; Elison de Nazareth (Cambridge, MA)
Massachusetts Institute of Technology (Cambridge, MA)
14/ 082,618
November 18, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Grant No. N00014-09-1-0864 awarded by the US Office of Naval Research and under Contract No. DE-AR0000123 awarded by the Department of Energy. The government has certain rights in this invention.