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Epitaxial growth of CZT(S,Se) on silicon

United States Patent

9,287,426
March 15, 2016
View the Complete Patent at the US Patent & Trademark Office
Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.
Bojarczuk; Nestor A. (Poughkeepsie, NY), Gershon; Talia S. (White Plains, NY), Guha; Supratik (Chappaqua, NY), Shin; Byungha (Daejeon, KR), Zhu; Yu (West Harrison, NY)
International Business Machines Corporation (Armonk, NY)
14/ 499,788
20160093755
September 29, 2014
STATEMENT OF GOVERNMENT RIGHTS This invention was made with Government support under Contract number DE-EE0006334 awarded by Department of Energy. The Government has certain rights in this invention.