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Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

United States Patent

March 1, 2016
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
Fischer; Arthur J. (Albuquerque, NM), Tsao; Jeffrey Y. (Albuquerque, NM), Wierer, Jr.; Jonathan J. (Albuquerque, NM), Xiao; Xiaoyin (Albuquerque, NM), Wang; George T. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 624,074
February 17, 2015
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U. S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.