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Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

United States Patent

February 23, 2016
View the Complete Patent at the US Patent & Trademark Office
An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
Sumant; Anirudha V. (Argonne, IL), Auciello; Orlando H. (Lemont, IL), Mancini; Derrick C. (Argonne, IL)
UChicago Argonne, LLC (Argonne, IL)
14/ 731,830
June 5, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The United States Government has rights in this invention pursuant to Contract No. DE-AC02-06CH11357 between the U.S. Department of Energy (DOE) and UChicago Argonne, LLC representing Argonne National Laboratory and pursuant to Contract No. MIPR06-W238 between the Defense Advanced Research Projects Agency (DARPA) and UChicago Argonne, LLC representing Argonne National Laboratory.