The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
STATEMENT OF GOVERNMENT LICENSE RIGHTS
The Princeton inventors received partial funding support through the National Science Foundation under Grant Number DMR-0705920 and the Princeton MRSEC of the National Science Foundation under Grant number DMR-08 19860. The Georgia Tech inventors received partial funding support through the National Science Foundation under Grant Number DMR-0120967, the Department of Energy, Basic Energy Sciences under Grant number DE-FG02-07ER46467, and the Office of Naval Research under Grant number. N00014-11-1-0313. The Federal Government has certain rights in these inventions.