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N-doping of organic semiconductors by bis-metallosandwich compounds

United States Patent

9,231,219
January 5, 2016
View the Complete Patent at the US Patent & Trademark Office
The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
Barlow; Stephen (Atlanta, GA), Qi; Yabing (Plainsboro, NJ), Kahn; Antoine (Princeton, NJ), Marder; Seth (Atlanta, GA), Kim; Sang Bok (Cambridge, MA), Mohapatra; Swagat K. (Atlanta, GA), Guo; Song (Atlanta, GA)
Georgia Tech Research Corporation (Atlanta, GA), Princeton University (Princeton, NJ)
14/ 126,319
20140302635
June 13, 2012
STATEMENT OF GOVERNMENT LICENSE RIGHTS The Princeton inventors received partial funding support through the National Science Foundation under Grant Number DMR-0705920 and the Princeton MRSEC of the National Science Foundation under Grant number DMR-08 19860. The Georgia Tech inventors received partial funding support through the National Science Foundation under Grant Number DMR-0120967, the Department of Energy, Basic Energy Sciences under Grant number DE-FG02-07ER46467, and the Office of Naval Research under Grant number. N00014-11-1-0313. The Federal Government has certain rights in these inventions.