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Conductivity based on selective etch for GaN devices and applications thereof

United States Patent

December 8, 2015
View the Complete Patent at the US Patent & Trademark Office
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
Zhang; Yu (Princeton, NJ), Sun; Qian (Woodbridge, CT), Han; Jung (Woodbridge, CT)
Yale University (New Haven, CT)
13/ 559,199
July 26, 2012
STATEMENT REGARDING FEDERALLY-SPONSORED RESEARCH AND DEVELOPMENT Part of the work performed during development of this invention utilized U.S. Government funds under grants DE-FC26-07NT43227, DE-FG0207ER46387, and DE-SCOOO1134 awarded by the U.S. Department of Energy. The U.S. Government has certain rights in this invention.