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Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

United States Patent

November 24, 2015
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.
Liu; Yi (Fremont, CA), He; Bo (Albany, CA), Pun; Andrew (Folsom, CA)
The Regents of the University of California (Oakland, CA)
14/ 687,059
April 15, 2015
STATEMENT OF GOVERNMENTAL SUPPORT The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 between the U.S. Department of Energy and the Regents of the University of California for the management and operation of the Lawrence Berkeley National Laboratory. The government has certain rights in this invention.