A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
This invention was made with government support under Contract Number ECCS0838439 awarded by the National Science Foundation, Contract Number DMR0520550 awarded by the National Science Foundation, Contract Number FA9550-09-1-0288 awarded by the Air Force Office of Scientific Research, and Contract Number DE-AC04-94AL85000 awarded by the U.S. Department of Energy's National Nuclear Security Administration. The government has certain rights in the invention.