A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH & DEVELOPMENT
This invention was made with government support under Grant No. DE-FG02-96ER45612 awarded by the Department of Energy, Office of Basic Energy Sciences; and MRSEC on Polymers Grant No. DMR-0213695 awarded by the National Science Foundation. The government has certain rights in the invention.