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Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles

United States Patent

9,156,682
October 13, 2015
View the Complete Patent at the US Patent & Trademark Office
A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
Russell; Thomas P. (Amherst, MA), Hong; Sung Woo (Amherst, MA), Lee; Doug Hyun (Amherst, MA), Park; Soojin (Ulsan, KR), Xu; Ting (Berkeley, CA)
THE UNIVERSITY OF MASSACHUSETTS (Boston, MA), THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland, CA), UNIST ACADEMY-INDUSTRY RESEARCH CORPORATION (KR)
13/ 480,506
20120301677
May 25, 2012
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH & DEVELOPMENT This invention was made with government support under Grant No. DE-FG02-96ER45612 awarded by the Department of Energy, Office of Basic Energy Sciences; and MRSEC on Polymers Grant No. DMR-0213695 awarded by the National Science Foundation. The government has certain rights in the invention.