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Technique for etching monolayer and multilayer materials

United States Patent

October 6, 2015
View the Complete Patent at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.
Bouet; Nathalie C. D. (Wading River, NY), Conley; Raymond P. (Manorville, NY), Divan; Ralu (Darien, IL), Macrander; Albert (Naperville, IL)
Brookhaven Science Associates, LLC (Upton, NY), UChicago Argonne, LLC (Chicago, IL)
13/ 371,124
February 10, 2012
STATEMENT OF GOVERNMENT LICENSE RIGHTS The present invention was made with Government support under contract numbers DE-AC-02-98CH10886 and DE-AC02-06CH11357, awarded by the U.S. Department of Energy. The Government has certain rights in the invention.